Atmospheric pressure chemical vapor deposition

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S681000, C257SE21101, C427S076000, C427S255310

Reexamination Certificate

active

07635647

ABSTRACT:
A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the condensation temperature of the semiconductor material, directing the fluid mixture at substantially atmospheric pressure onto the substrate having a temperature below the condensation temperature of the semiconductor material, and depositing a layer of the semiconductor material onto a surface of the substrate.

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patent: 2001/0041463 (2001-11-01), Kakkad
patent: 2006/0236939 (2006-10-01), Powell et al.
patent: 2006/0236940 (2006-10-01), Powell et al.
Chemical Vapor Deposition of Chalcogenide Semiconductors, NTiS, Aug. 1975, U.S. Department of Commerce, National Technical Information Service, ADA017524, Massachusetts Inst of Tech Cambridge Center for Materials Science and Engineering; H. Kent Bowen, et al.

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