Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-11-27
2007-11-27
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S507000, C438S679000, C438S680000, C438S681000
Reexamination Certificate
active
11448966
ABSTRACT:
A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is introduced into the treatment space to coat a substrate film or web (14) by vapor deposition or atomized spraying at atmospheric pressure. The deposited precursor is cured by electron-beam, infrared-light, visible-light, or ultraviolet-light radiation, as most appropriate for the particular material being deposited. Additional plasma post-treatment may be used to enhance the properties of the resulting coated products.
REFERENCES:
patent: 5968377 (1999-10-01), Yuasa et al.
patent: 6060453 (2000-05-01), Thomson et al.
patent: 6774018 (2004-08-01), Mikhael et al.
patent: 7067405 (2006-06-01), Mikhael et al.
Ellwanger Richard E.
Mikhael Michael G.
Yializis Angelo
Durando Antonio R.
Louie Wai-Sing
Sigma Laboratories of Arizona, LLC
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