Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2006-06-27
2006-06-27
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S507000, C438S679000, C438S680000, C438S681000
Reexamination Certificate
active
07067405
ABSTRACT:
A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric material, a precursor material is mixed with the plasma, and a substrate film or web is coated by vapor deposition of the vaporized substance at atmospheric pressure in the plasma field. The deposited precursor is cured by electron-beam, infrared-light, visible-light, or ultraviolet-light radiation, as most appropriate for the particular material being-deposited. Plasma pre-treatment and post-treatment steps are used to enhance the properties of the resulting coated products. Similar results are obtained by atomizing and spraying the liquid precursor in the plasma field.
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Ellwanger Richard E.
Mikhael Michael G.
Yializis Angelo
Durando Antonio R.
Louie Wai-Sing
Sigma Laboratories of Arizona, Inc.
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