Asynchronous static random access memory

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S194000, C365S203000, C365S230030, C365S230050

Reexamination Certificate

active

11200722

ABSTRACT:
A static random access memory (SRAM) is provided including a plurality of SRAM state elements and SRAM environment circuitry. The SRAM environment circuitry is operable to interface with external asynchronous circuitry and to enable reading of and writing to the SRAM state elements in a delay-insensitive manner.

REFERENCES:
patent: 5752070 (1998-05-01), Martin et al.
patent: 5790461 (1998-08-01), Holst
patent: 6038656 (2000-03-01), Martin et al.
patent: 6349378 (2002-02-01), Duranton et al.
patent: 6446249 (2002-09-01), Wang et al.
patent: 6502180 (2002-12-01), Martin et al.
patent: 6505323 (2003-01-01), Lipton et al.
patent: 6519204 (2003-02-01), Slamowitz et al.
patent: 6614438 (2003-09-01), Bru
patent: 6732336 (2004-05-01), Nystrom et al.
patent: 2003/0146073 (2003-08-01), Cummings et al.
patent: 2003/0151426 (2003-08-01), Islam
patent: 2003/0159078 (2003-08-01), Davies et al.
Andrew Matthew Lines,Pipelined Asynchronous Circuits, Jun. 1995, revised Jun. 1998, pp. 1-37.
Alain J. Martin,Compiling Communicating Processes into Delay-Insensitive VLSI Circuits, Dec. 31, 1985, Department of Computer Science California Institute of Technology, Pasadena, California, pp. 1-16.
Alain J. Martin,Erratum: Synthesis of Asynchronous VLSI Circuits, Mar. 22, 2000, Department of Computer Science California Institute of Technology, Pasadena, California, pp. 1-143.
U.V. Cummings, et al.An Asynchronous Pipelined Lattice Structure Filter, Department of Computer Science California Institute of Technology, Pasadena, California, pp. 1-8. Nov. 1994.
Alain J. Martin, et al.The Design of an Asynchronous MIPS R3000 Microprocessor, Department of Computer Science California Institute of Technology, Pasadena, California, pp. 1-18. Sep. 1997.

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