Asymmetrical well charge coupled device

Details Asymmetrical well charge coupled device Asymmetrical well charge coupled device

1974-11-27

1976-06-29

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 68, 357 71, 357 91, H01L 2710, H01L 2978

Patent

active

039673065

ABSTRACT:
In a charge coupled device provided with a two-phase overlapping gate structure, charge flow directionality is built into the structure by forming an asymmetrical potential well beneath each gate electrode with a single offset mask. High packing density is achieved in an array of staggered bits and with each bit being designed to have a geometry of minimum size.

REFERENCES:
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3756924 (1973-09-01), Collins et al.
patent: 3760202 (1973-09-01), Kosonocky
patent: 3789267 (1974-01-01), Krambeck et al.
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3810795 (1974-05-01), Troutman
patent: 3819959 (1974-06-01), Chang et al.
patent: 3837907 (1974-09-01), Berglund et al.
patent: 3865652 (1975-02-01), Angusta et al.

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