Asymmetrical transistor with lightly and heavily doped drain reg

Details Asymmetrical transistor with lightly and heavily doped drain reg Asymmetrical transistor with lightly and heavily doped drain reg

1998-05-20

2000-06-20

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 2976

Patent

active

060780800

ABSTRACT:
An asymmetrical IGFET including a lightly and heavily doped drain regions and an ultra-heavily doped source region is disclosed. Preferably, the lightly doped drain region and ultra-heavily doped source region provide channel junctions. A method of making the IGFET includes providing a semiconductor substrate, forming a gate with first and second opposing sidewalls over the substrate, applying a first ion implantation to implant lightly doped source and drain regions into the substrate, applying a second ion implantation to convert substantially all of the lightly doped source region into a heavily doped source region without doping the lightly doped drain region, forming a drain-side spacer adjacent to the second sidewall, and applying a third ion implantation to convert the heavily doped source region into an ultra-heavily doped source region and to convert a portion of the lightly doped drain region outside the drain-side spacer into a heavily doped drain region without doping a portion of the lightly doped drain region beneath the drain-side spacer. Advantageously, the IGFET has low source-drain series resistance and reduces hot carrier effects.

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