Asymmetrical semiconductor heterostructure laser cavity and lase

Details Asymmetrical semiconductor heterostructure laser cavity and lase Asymmetrical semiconductor heterostructure laser cavity and lase

1993-04-16

1994-09-20

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 7, 372 44, 372 48, 372 50, 257 12, 257 14, 257183, 257191, H01S 318, H01L 21203

Patent

active

053495969

ABSTRACT:
A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.

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