Drive circuit for semiconductor light-emitting device

Details Drive circuit for semiconductor light-emitting device Drive circuit for semiconductor light-emitting device

1993-02-26

1994-09-20

Epps, Georgia Y.

Coherent light generators

Particular component circuitry

Optical pumping

372 25, 372 29, 372 30, 372 31, H01S 300

Patent

active

053495950

ABSTRACT:
A drive circuit for supplying a constant drive current to the anode terminal of a semiconductor light emitting device, includes a current supply source connected to the anode terminal for supplying a bias current to the semiconductor light emitting device. Since the drive circuit is formed so as to supply the bias current to the anode terminal of the semiconductor light emitting device, a charge current for charging a conjunction capacitance can be reduced independently on the time period of turning off the semiconductor light emitting device. As a result, a spike noise can be removed in the laser current waveform at its rise-up part, and a reduction of its rise-up speed can be restricted, both of which are due to a dependent upon the time period of turning off the semiconductor device.

REFERENCES:
patent: 4748633 (1988-05-01), Negishi
patent: 4809286 (1989-02-01), Kollanyi et al.
patent: 4817097 (1989-03-01), Dufour
patent: 4835780 (1989-05-01), Sugimura et al.
patent: 5115147 (1992-05-01), Kusano et al.
patent: 5182756 (1993-01-01), Waki et al.
"GaAs MESFET Laser-Driver IC for 1.7Gbit/s Lightwave Transmitter" by F. S. Chen et al.; Journal of Lightwave Technology; Mar. 1988, vol. 6, No. 3, New York USA; pp. 475-479.
"Design of a Silicon Bipolar Laser-and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s" by H. M. Rein; Frequenz; Jan. 1992, vol. 46; No. 1/2, Berlin De pp. 31-37.

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