Asymmetrical resist sidewall

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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active

059485710

ABSTRACT:
A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.

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patent: 5672450 (1997-09-01), Rolfson
patent: 5718829 (1998-02-01), Pierrat
New Focus Metrology Technique Using Special Test Mask, Timothy A. Brunner, IBM Semiconductor Research and Development Center, Hopewell Junction, New York, 1994.
Simulations and Experiments With The Phase Shift Focus Monitor, T.A. Brunner & R.D. Mih, IBM Advanced Semiconductor Technology Center, Hopewell Junction, New York 12533, Feb., 1996.

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