Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-04
1998-08-04
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257344, 438286, H01L 2976
Patent
active
057897875
ABSTRACT:
An asymmetrical N-channel IGFET and an asymmetrical P-channel IGFET are disclosed. One or both IGFETs include a lightly doped drain region, heavily doped source and drain regions, and an ultra-heavily doped source region. Preferably, the heavily doped source region and lightly doped drain region provide channel junctions. Forming a first asymmetrical IGFET includes forming a gate with first and second opposing sidewalls over a first active region, applying a first ion implantation to implant lightly doped source and drain regions into the first active region, applying a second ion implantation to convert substantially all of the lightly doped source region into a heavily doped source region without doping the lightly doped drain region, forming first and second spacers adjacent to the first and second sidewalls, respectively, and applying a third ion implantation to convert a portion of the heavily doped source region outside the first spacer into an ultra-heavily doped source region without doping a portion of the heavily doped source region beneath the first spacer, and to convert a portion of the lightly doped drain region outside the second spacer into a heavily doped drain region without doping a portion of the lightly doped drain region beneath the second spacer. A second asymmetrical IGFET is formed in a related manner. Advantageously, one or both IGFETs have low source-drain series resistance and reduce hot carrier effects.
REFERENCES:
patent: 4225875 (1980-09-01), Ipri
patent: 4272881 (1981-06-01), Angle
patent: 4927777 (1990-05-01), Hsu et al.
patent: 5001077 (1991-03-01), Sahai
patent: 5073514 (1991-12-01), Ito et al.
patent: 5132753 (1992-07-01), Chang et al.
patent: 5171700 (1992-12-01), Zamanian
patent: 5200358 (1993-04-01), Bollinger et al.
patent: 5286664 (1994-02-01), Horiuchi
patent: 5296398 (1994-03-01), Noda
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5364807 (1994-11-01), Hwang
patent: 5366915 (1994-11-01), Kadama
patent: 5397715 (1995-03-01), Miller
patent: 5424229 (1995-06-01), Oyamatsu
patent: 5424234 (1995-06-01), Kwon
patent: 5436482 (1995-07-01), Ogoh
patent: 5451807 (1995-09-01), Fujita
patent: 5510279 (1996-04-01), Chien et al.
patent: 5512503 (1996-04-01), Hong
patent: 5518940 (1996-05-01), Hodate et al.
patent: 5521417 (1996-05-01), Wada
patent: 5525552 (1996-06-01), Huang
patent: 5547885 (1996-08-01), Ogoh
patent: 5547888 (1996-08-01), Yamazaki
patent: 5578509 (1996-11-01), Fujita
patent: 5585293 (1996-12-01), Sharma et al.
patent: 5585658 (1996-12-01), Muhai et al.
patent: 5607869 (1997-03-01), Yamazaki
patent: 5648286 (1997-07-01), Gardner et al.
patent: 5672531 (1997-09-01), Gardner et al.
IBM Technical Disclosure Bulletin, "Process for Making Very Small, Asymmetric, Field-Effect Transistors", vol. 30, no. 3, Aug. 1987, pp. 1136-1137 (XP 000671026).
IBM Technical Disclosure Bulletin, "Low Series Resistance Source by Spacer Methods", vol. 33, no. 1A, Jun. 1, 1990, pp. 75-77 (XP 000120044).
Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices , Inc.
Prenty Mark V.
Sigmond David M.
LandOfFree
Asymmetrical N-channel and P-channel devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Asymmetrical N-channel and P-channel devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetrical N-channel and P-channel devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1180001