Asymmetrical field effect transistor

Details Asymmetrical field effect transistor Asymmetrical field effect transistor

1997-03-12

2000-01-18

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257401, 257408, 257654, H01L 2902

Patent

active

06015991&

ABSTRACT:
Disclosed is an asymmetric field effect transistor which comprises a first region serving as source, a second region serving as drain, a thin gate oxide and a gate electrode. The gate electrode is asymmetric and one of its sidewalls is sloped. The second region extends underneath said sloped sidewall. The part of said second region which extends underneath said gate electrode is less doped than the remaining part of said second region. Furthermore, said second region has a sloped junction edge underneath said gate electrode.

REFERENCES:
patent: 4258465 (1981-03-01), Yasui et al.
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 5177571 (1993-01-01), Satoh et al.
patent: 5234852 (1993-08-01), Liou
patent: 5300786 (1994-04-01), Brunner et al.
patent: 5368962 (1994-11-01), Kiryu et al.
patent: 5370975 (1994-12-01), Nakatani
patent: 5518945 (1996-05-01), Bracchitta et al.
patent: 5547789 (1996-08-01), Nakatani et al.
C-H. Hsu and D-S. Wen, "Method for Making Self-Aligned, Reverse-T Gate LDD MOSFET", IBM Technical Disclosure Bulletin, vol. 32, No. 3B, Aug. 1989, pp. 154-155.
Y. Taur and L. K. Wang, "Process for Fabricating Lightly Doped Drain MOS Devices with Punch-Through Stoppers", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, pp. 6622-6623.
M. Hargrove, E. Miersch, G. Pittman and D. Thomas, "Integrated SCHOTTKY Diode in CMOS", IBM Disclosure Technical Bulletin, vol. 28, No. 12, May 1986, pp. 5178-5179.
R. L. Mohler aNd S. S. Roth, "LDD Sidewall Spacers without Reactive Ion Etch", IBM Technical Disclosure Bulletin, vol. 27, No. 7B, Dec. 1984, pp. 4362-4364.

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