Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-17
1998-07-14
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257565, 257566, H01L 2362
Patent
active
057809054
ABSTRACT:
An ESD protection structure which includes, preferably a single semiconductor chip, a forward SCR for coupling across a source of potential and a reverse SCR for coupling across the same source of potential which is non-symmetrical to the forward SCR. The breakdown voltage of the forward SCR is different from the breakdown voltage of the reverse SCR. Each of the SCRs has a separate triggering mechanism. None of the anode, cathode and triggering elements of the forward SCR are common to the reverse SCR. A unidirectional device, preferably a Schottky diode, is disposed in the body of semiconductor material between the forward and reverse SCRs to prevent conduction from the body of semiconductor material when the source of potential across the SCRs is reversed.
REFERENCES:
patent: 4870530 (1989-09-01), Hurst et al.
patent: 5400202 (1995-03-01), Metz et al.
patent: 5602404 (1997-02-01), Chen et al.
Chen Julian Z.
Chen Wayne T.
Teggatz Ross E.
Brady III Wade J.
Donaldson Richard L.
Hardy David B.
Stewart Alan K.
Texas Instruments Incorporated
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