Asymmetric write current compensation using gate overdrive...

Details Asymmetric write current compensation using gate overdrive... Asymmetric write current compensation using gate overdrive...

2011-08-30

2011-08-30

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S210110, C365S203000, C365S100000

Reexamination Certificate

active

08009458

ABSTRACT:
Apparatus and associated method for asymmetric write current compensation for resistive sense memory (RSM) cells, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) cells. In accordance with some embodiments, an RSM cell includes an RSM element coupled to a switching device. The switching device has a plurality of terminals. A control circuit compensates for asymmetric write characteristics of the RSM cell by limiting a range of voltage differentials across the terminals so as to be equal to or less than a magnitude of a source voltage applied to the switching device, thereby providing bi-directional write currents of substantially equal magnitude through the RSM element.

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