Asymmetric waveguide GaInAs laser diode

Details Asymmetric waveguide GaInAs laser diode Asymmetric waveguide GaInAs laser diode

2006-09-26

2006-09-26

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

07113531

ABSTRACT:
A laser diode is provided. The laser diode has a structure in which reflective index of an n-cladding layer formed on a first face of the active layer is higher than that of a p-cladding layer formed on a second face. This asymmetric waveguide structure suppresses extension of field into the p-cladding layer thus reducing free carrier absorption in the p-cladding layer.

REFERENCES:
patent: 5904549 (1999-05-01), Sato
patent: 2002/0179929 (2002-12-01), Takahashi et al.
patent: 2003/0138014 (2003-07-01), Lovisa

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