Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-11-18
1996-04-02
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257759, 257760, 257774, H01L 2348, H01L 2946, H01L 2954, H01L 2962
Patent
active
055043755
ABSTRACT:
In the design of stud and conducting line joints, the conducting line is extended beyond the stud without any significant overhang of the line in the width direction for minimizing induced stress in order to reduce voids and crack growth in the region where the connecting line is joined to the stud. The preferred length of the extension is in the range approximately between one-quarter and twice the stud dimension. The design is applicable, but not limited to, multilevel integrated circuits used in computers and other electrical devices.
REFERENCES:
patent: 3874072 (1975-04-01), Rose
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4614021 (1986-09-01), Hulseweh
patent: 4905068 (1990-02-01), Satoh et al.
patent: 4908690 (1990-03-01), Hata et al.
patent: 4914056 (1990-04-01), Okumura
patent: 4960489 (1990-10-01), Roeska et al.
patent: 5025303 (1991-06-01), Brighton
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5063175 (1991-11-01), Broadbent
S. Mayumi, et al, "The Effect of Cu Addition to Al-Si Interconnects on Stress Induced Open-Circuit Failures", 1987 IEEE/IRPS, pp. 15-21.
K. Hinode et al, "Stree-Induced grain boundary fractures in Al-Si interconnects", J. Vac. Sci. Technol. B5(2), 518 (1987).
J. W. McPherson et al "A model for stress-induced metal notching and voiding in very large-scale-integrated Al-Si (1%) metallization", J. Vac. Sci. Technol. B5(5), 1321 (1987).
C. Y. Li et al "Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallization", Appl. Phys. Lett. 53(1) 31 (1988).
T. Sullivan "Thermal dependence of voiding in narrow aluminum microelectronic interconnects", Appl. Phys. Lett. 55(23) 2399 (1989).
P. A. Flinn et al, "Measurement and Interpretation of Stress in Aluminum-Based Metalliztaion as a Function of Thermal History", IEEE Trans. on Electron Devices, vol. ED-34, No. 3, 689 (1987).
Q. Guo, et al "A stress induced diffusion model for failure of interconnects in microelectronic devices", Northwest University Research Report (1990).
Carlson William H.
Shi Leathen
Tu King-Ning
Crane Sara W.
International Business Machines - Corporation
Jr. Carl Whitehead
LandOfFree
Asymmetric studs and connecting lines to minimize stress does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Asymmetric studs and connecting lines to minimize stress, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Asymmetric studs and connecting lines to minimize stress will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2018449