Asymmetric semiconductor devices and method of fabricating

Details Asymmetric semiconductor devices and method of fabricating Asymmetric semiconductor devices and method of fabricating

2011-08-16

2011-08-16

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S369000, C257S900000

Reexamination Certificate

active

07999332

ABSTRACT:
A semiconductor structure is provided that includes an asymmetric gate stack located on a surface of high k gate dielectric. The asymmetric gate stack includes a first portion and a second portion, wherein the first portion has a different threshold voltage than the second portion. The first portion of the inventive asymmetric gate stack includes, from bottom to top, a threshold voltage adjusting material and at least a first conductive spacer, while the second portion of the inventive asymmetric gate stack includes at least a second conductive spacer over the gate dielectric. In some embodiments, the second conductive spacer is in direct contact with the underlying high k gate dielectric, while in other embodiments, in which the first and second conductive spacers are comprised of different conductive materials, the base of the second conductive spacer is in direct contact with the threshold adjusting material.

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