Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-19
1994-07-19
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257320, H01L 2978
Patent
active
053311892
ABSTRACT:
A flash EEPROM is produced comprising multiple MOS cells. In each cell, programming and erasing are performed through tunneling from the write gate to the floating gate and by tunneling from the floating gate to the erase gate, respectively. The directional dielectric employed is a multilayered structured (MLS) oxide, where thin oxide and thin polycrystalline silicon form alternating layers. The layering is asymmetric: that is, either the uppermost or bottommost layer is thicker than the other layers. As a result of this structure, the oxide exhibits directionality, that is, the tunneling is easier in one direction than the reverse direction, and significantly enhances the tunneling phenomena (tunneling current can be observed at as low as 4.7 V). In addition, the MLS oxide can be fabricated having different dielectric constants. The directionality, coupled with the separate write and erase gates, gives the new flash EEPROM cell a number of advantages: it is low-voltage operable, it is highly resistant to disturbance and has an easily scalable structure (that is, it can be made to operate at any given voltage within a specified scale).
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Chan Kevin K.
Dhong Sang H.
Kern Dieter P. E.
Lee Young H.
Aker David
Crane John
International Business Machines - Corporation
Jackson Jerome
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