Asymmetric low power MOS devices

Details Asymmetric low power MOS devices Asymmetric low power MOS devices

1996-07-05

1998-07-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257344, H01L 2976, H01L 29788, H01L 2994

Patent

active

057809127

ABSTRACT:
Low threshold voltage MOS devices having asymmetric halo implants are disclosed herein. An asymmetric halo implant provides a pocket region located under a device's source or drain near where the source (or drain) edge abuts the device's channel region. The pocket region has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. Only the source or drain, not both, have the primary pocket region. An symmetric halo device behaves like two pseudo-MOS devices in series: a "source FET" and a "drain FET." If the pocket implant is located under the source, the source FET will have a higher threshold voltage and a much shorter effective channel length than the drain FET.

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