Asymmetric field effect transistor structure and method

Details Asymmetric field effect transistor structure and method Asymmetric field effect transistor structure and method

2007-10-09

2010-11-30

Stark, Jarrett J (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255

Reexamination Certificate

active

07843016

ABSTRACT:
Disclosed are embodiments for a design structure of an asymmetric field effect transistor structure and a method of forming the structure in which both series resistance in the source region (Rs) and gate to drain capacitance (Cgd) are reduced in order to provide optimal performance (i.e., to provide improved drive current with minimal circuit delay). Specifically, different heights of the source and drain regions and/or different distances between the source and drain regions and the gate are tailored to minimize series resistance in the source region (i.e., in order to ensure that series resistance is less than a predetermined resistance value) and in order to simultaneously to minimize gate to drain capacitance (i.e., in order to simultaneously ensure that gate to drain capacitance is less than a predetermined capacitance value).

REFERENCES:
patent: 6946706 (2005-09-01), Brisbin et al.
patent: 2002/0036328 (2002-03-01), Richards et al.
patent: 2004/0248368 (2004-12-01), Natzle et al.
patent: 2006/0220120 (2006-10-01), Horch
patent: 2007/0032028 (2007-02-01), Zhu et al.
patent: 2007/0080401 (2007-04-01), Yang
patent: 08-204177 (1996-08-01), None
patent: 08-330578 (1996-12-01), None
patent: 13-007324 (2001-01-01), None
PCT International Search Report for International Application No. PCT/US2008/070102, International Searching Authority Communication, Jan. 23, 2009.
Anderson et al., U.S. Appl. No. 11/778,185, Office Action Communication, Aug. 20, 2009, 6 pages.
Anderson et al., U.S. Appl. No. 11/778,185, Office Action Communication, Mar. 18, 2010, 10 pages.

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