Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S285000, C257S286000, C257S335000, C257S336000, C257S344000, C257S345000, C257S362000, C257S368000, C257S369000, C257S371000, C257S372000, C257S736000
Reexamination Certificate
active
07968921
ABSTRACT:
An asymmetric insulated-gate field-effect transistor (100) has a source (240) and a drain (242) laterally separated by a channel zone (244) of body material (180) of a semiconductor body. A gate electrode (262) overlies a gate dielectric layer (260) above the channel zone. A more heavily doped pocket portion (250) of the body material extends largely along only the source. Each of the source and drain has a main portion (240M or242M) and a more lightly doped lateral extension (240E or242E). The drain extension is more lightly doped than the source extension. The maximum concentration of the semiconductor dopant defining the two extensions occurs deeper in the drain extension than in the source extension. Additionally or alternatively, the drain extension extends further laterally below the gate electrode than the source extension. These features enable the threshold voltage to be highly stable with operational time.
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Archer Donald M.
Bahl Sandeep R.
Bulucea Constantin
French William D.
Johnson Peter B.
Meetin Ronald J.
National Semiconductor Corporation
Pham Long
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