Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Patent
1995-10-10
1998-07-14
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
257 21, 257 97, 257 98, 257431, 257436, 257449, 372 45, 372 46, H01L 21095, H01L 2947
Patent
active
057809160
ABSTRACT:
A metal-semiconductor-metal (MSM) photodetector, specifically a new, improved low noise device is disclosed. The disclosed device is a MSM photodiode in which the cathode and anode are made of different materials with optimal Schottky barrier heights. One of these materials is chosen to provide a high ratio of Schottky barrier height to hole transport and the other to provide a high ratio of Schottky barrier height to electron transport. The disclosed MSM photodetector is designed to allow each Schottky barrier to be individually optimized to the point that a wide bandgap Schottky barrier enhancement layer and its associated heterointerface may become unnecessary. Elimination of the charge buildup at the heterointerface enhances carrier extraction resulting in photodetectors with elevated quantum efficiency and enhanced bandwidths.
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Berger Paul R.
Gao Wei
University of Delaware
Whitehead Carl W.
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