Asymmetric channel doping for improved memory operation for...

Details Asymmetric channel doping for improved memory operation for... Asymmetric channel doping for improved memory operation for...

2011-05-17

2011-05-17

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S345000, C257S347000, C257S341000, C257S335000, C257SE29178

Reexamination Certificate

active

07944003

ABSTRACT:
An improved dynamic memory cell using a semiconductor fin or body is described. Asymmetrical doping is used in the channel region, with more dopant under the back gate to improve retention without significantly increasing read voltage.

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Final Office Action from U.S. Appl. No. 11/444,941 mailed Apr. 6, 2009, 8 pgs.
Office Action from U.S. Appl. No. 11/444,941 mailed Sep. 24, 2008, 6 pgs.
Ohsawa, Takashi , et al., “Memory Design Using a One-Transistor Gain Cell on SOI,” IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, 13 pgs.

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