Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-22
2009-11-10
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S106000, C438S107000, C438S758000
Reexamination Certificate
active
07615479
ABSTRACT:
An electronic assembly. The assembly includes a substrate, a plurality of recessed regions, and a plurality of functional blocks. Each functional block is deposited in one of the recessed regions. A substantial amount of the plurality of functional blocks is recessed below a top surface of the substrate. Substantial amount is defined by any one of less than 10% of said functional blocks protrudes above the top surface of the substrate; less than 1% of the functional blocks protrudes above the top surface of the substrate; more than 90% of the functional blocks are recessed below the top surface of the substrate; or more than 99% of the functional blocks are recessed below the top surface of the substrate.
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Craig Gordon S. W.
Gengel Glenn
Hadley Mark A.
Herrmann Scott
Kanemoto Eric
Alien Technology Corporation
Blakely , Sokoloff, Taylor & Zafman LLP
Luu Chuong A.
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