Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-04-17
2007-04-17
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S734000, C257SE23021
Reexamination Certificate
active
10777804
ABSTRACT:
A microelectronic assembly includes a first microelectronic element having a contact bearing face and at least one contact accessible at the contact bearing face, and a second microelectronic element opposing the first microelectronic element, the second microelectronic element having a first surface including at least one lead extending over the first surface. The microelectronic assembly includes the first fusible material engaging the at least one contact of the first microelectronic element, and a second fusible material engaging the at least one lead, whereby one of the first and second fusible materials has a higher melting temperature and one of the first and second fusible materials has a lower melting temperature. The first and second microelectronic elements are juxtaposed with one another so that the first and second fusible materials are in substantial alignment with one another, with one of the first and second fusible materials in a liquid state and one of the first and second fusible materials in a solid state.
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Beroz Masud
Light David
Andujar Leonardo
Lerner David Littenberg Krumholz & Mentlik LLP
Quinto Kevin
Tessera Inc.
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