Article comprising fluorinated amorphous carbon and method for f

Details Article comprising fluorinated amorphous carbon and method for f Article comprising fluorinated amorphous carbon and method for f

1998-11-19

2000-11-21

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419211, 20419215, 20419216, 2041922, C23C 1434

Patent

active

061497789

ABSTRACT:
The invention provides a device containing a low .kappa., hydrogen-free a-C:F layer with good adhesion and thermal stability. It was found that the combination of desirable properties was attainable by a relatively easy process, as compared to processes that utilize gaseous sources, such as CVD. Specifically, the a-C:F layer is formed by sputter deposition, using only solid sources for the fluorine and carbon, and in the absence of any intentionally-added hydrogen-containing source. The sputtering is performed such that the layer contains 20 to 60 at. % fluorine, and also, advantageously, such that the a-C:F exhibits a bandgap of about 2.0 eV or greater. The a-C:F layer formed by the process of the invention exhibits a dielectric constant, at 1 MHz and room temperature, of 3.0 or less, advantageously 2.5 or less, along with being thermally stable up to at least 350.degree. C., advantageously 450.degree. C., and exhibiting a stress of about 100 MPa or less, in absolute value.

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