Article comprising an oxide layer on GAN

Details Article comprising an oxide layer on GAN Article comprising an oxide layer on GAN

1997-10-10

1999-06-15

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257288, H01L 2976

Patent

active

059124989

ABSTRACT:
A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.

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"Determination of the Oxygen Binding Site on GaAs (110) Using Soft-X-Ray-Photoemission Spectroscopy", by P. Pianetta et al., Physical Review Letters, vol. 35, No. 26, Nov. 17, 1997, pp. 1356-1359.
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