Arsenic and phosphorus doped silicon wafer substrates having...

Details Arsenic and phosphorus doped silicon wafer substrates having... Arsenic and phosphorus doped silicon wafer substrates having...

2005-11-09

2009-02-03

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE21320, C257SE21275, C257SE21321, C257SE21435

Reexamination Certificate

active

07485928

ABSTRACT:
A process for the preparation of low resistivity arsensic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.

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