Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-08-15
2010-10-19
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C345S087000, C349S048000
Reexamination Certificate
active
07816683
ABSTRACT:
In an array substrate and a display apparatus, a gate line receives a gate pulse during a present 1H period and a data line receives a pixel voltage having a polarity inverted at every frame. When a thin film transistor is turned on in response to the gate pulse during the present 1H period, a pixel electrode receives the pixel voltage through the thin film transistor during the present 1H period. A pre-charging part pre-charges the pixel electrode to a common voltage that is a reference voltage of the pixel voltage in response to a previous gate pulse during a previous 1H period.
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Extended Search Report issued Sep. 10, 2009 by the European Patent Office for European Application No. 07017273.9.
Hur Myung-Koo
Kim Sung-Man
Lee Bong-Jun
Lee Hong-Woo
Gurley Lynne A
H.C. Park & Associates PLC
Samsung Electronics Co,. Ltd.
Yushina Galina
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