Array of semiconducting layers for spin injection with high...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S421000

Reexamination Certificate

active

06949778

ABSTRACT:
This invention relates to a semiconductor array having a first semiconducting layer and a second semiconducting layer made of a ferromagnetic material, which is coupled to the first semiconducting layer in such a way that a spin-polarized state of the semiconducting charge carriers is injected into the first semiconducting layer. The second semiconducting layer interacts with charge carriers made available outside of the second semiconducting layer in such a way that a high spin polarization is created in the second semiconducting layer at least 250 Kelvin.

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