Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000
Reexamination Certificate
active
06949778
ABSTRACT:
This invention relates to a semiconductor array having a first semiconducting layer and a second semiconducting layer made of a ferromagnetic material, which is coupled to the first semiconducting layer in such a way that a spin-polarized state of the semiconducting charge carriers is injected into the first semiconducting layer. The second semiconducting layer interacts with charge carriers made available outside of the second semiconducting layer in such a way that a high spin polarization is created in the second semiconducting layer at least 250 Kelvin.
REFERENCES:
patent: 6753562 (2004-06-01), Hsu et al.
patent: 2001/0031547 (2001-10-01), Ohno et al
patent: 0 622 791 (1994-11-01), None
S. Datta et al., “Electronic analog of the ectro-optic modulator”, Appl. Phys. Lett. vol. 56, No. 7, Feb. 12, 1990, pp. 665-667.
T. Dietl, “Ferromagnetic semiconductors,” Semiconductor Science and Technology, vol. 17 2002, pp. 377-392.
P. Fumagalli et al., “Exchange-induced enhancement of Tcin Co1-x(EuS)xmacroscopic ferrimagnets”, Physical Review B, vol. 57, No. 22, Jun. 1, 1998, pp. 294-298.
R. Gambino et al., “Magneto-Optic Properties of Macroscopic Ferrimagnets, IEEE Transactions on Magnetics”, vol. 30, No. 6, Nov. 1994, pp. 4461-4463.
X. Hao, et al., “Spin-filter effect of ferromagnetic europium sulfide tunnel barriers”, Physical Review B., vol. 42, No.13, Nov. 1, 1990, pp. 8235-8243.
K. Kawaguchi, et al., “151Eu and57Fe Mössbauer and magnetization study on EuOx/Fe multilayered films”, Journal of Magnetism and Magnetic Materials, vol. 171-181, 1998, pp. 1186-1188*.
K. Kawaguchi, et al., “Magnetic properties of Fe/EuO multilayered films”, Journal of Magnetism and Magnetic Materials, vol. 156, 1996, pp. 235-236*.
E. Kisker, et al., “Electron field emission from ferromagnetic europium sulfide on tungsten”, Physical Review B, vol. 18, No. 5, Sep. 1, 1978, pp. 2256-2275.
U. Rücker, “Magnetic coupling phenomena in epitaxial layered systems consisting of iron and the ferromagnetic semiconductor europium sulphide”, May, 1998, pp. 1-2, 43-46, 67-70*.
G. Schmidt, et al., “Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor”, Physical Review B, vol. 62, No. 8, Aug. 15, 2000, pp. 4790-4793.
S.A. Wolf, et al., “Spintronics: A Spin-Based Electronics Vision for the Future”, Science, vol. 294, Nov. 16, 2001, pp. 1488-1495*.
Fumagalli Paul
Lippitz Holger
Müller Christian
Paggel Jens J.
Freie Universitaet Berlin
Rothwell, Figg, Ernst & Manback, P.C.
LandOfFree
Array of semiconducting layers for spin injection with high... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Array of semiconducting layers for spin injection with high..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Array of semiconducting layers for spin injection with high... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3414032