Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-12
2010-11-02
Nguyen, Thanh (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C257S303000, C257SE27086
Reexamination Certificate
active
07825451
ABSTRACT:
The invention includes methods and integrated circuitry. Pillars project outwardly from openings in a first material over individual capacitor storage node locations. Insulative material is deposited over the first material laterally about sidewalls of the projecting pillars, and is anisotropically etched effective to expose underlying first material and leave electrically insulative material received laterally about the sidewalls of the projecting pillars. Openings are formed within a second material to the pillars. The pillars are etched from the substrate through the openings in the second material, and individual capacitor electrodes are formed within the openings in electrical connection with the storage node locations. The individual capacitor electrodes have the anisotropically etched insulative material received laterally about their outer sidewalls. The individual capacitor electrodes are incorporated into a plurality of capacitors. Other implementations and aspects are contemplated.
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Micro)n Technology, Inc.
Nguyen Thanh
Wells St. John P.S.
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