Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2011-07-12
2011-07-12
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S007000
Reexamination Certificate
active
07977123
ABSTRACT:
A method, performed in connection with bevel etching of a substrate, for improving bevel-etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.
REFERENCES:
patent: 5807761 (1998-09-01), Coronel et al.
patent: 5862057 (1999-01-01), Xia et al.
patent: 7182821 (2007-02-01), Izumi et al.
patent: 7479236 (2009-01-01), Chen et al.
patent: 7486878 (2009-02-01), Chen et al.
patent: 2006/0141795 (2006-06-01), Negishi et al.
patent: 2006/0185792 (2006-08-01), Yashiki et al.
patent: 2007/0209684 (2007-09-01), Chen et al.
patent: 2007/0211241 (2007-09-01), Aizawa et al.
patent: 2007/0251919 (2007-11-01), Imai
patent: 2008/0003830 (2008-01-01), Qing et al.
patent: 2008/0080845 (2008-04-01), Chen et al.
patent: 2008/0081383 (2008-04-01), Chen et al.
patent: 2009/0233394 (2009-09-01), Batres et al.
patent: 2009/0272402 (2009-11-01), Kim et al.
“International Search Report”, Issued in PCT Application No. PCT/US07/78576; Mailing Date: Aug. 7, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US07/78576: Mailing Date: Aug. 7, 2008.
“International Search Report”, Issued in PCT Application No. PCT/US07/78578: Mailing Date: Aug. 8, 2008.
“Written Opinion”, Issued in PCT Application No. PCT/US07/78578; Mailing Date: Aug. 8, 2008.
“International Preliminary Report on Patentability”, Issued in PCT Application No. PCT/US2007/078576; Mailing Date: Apr. 9, 2009.
“International Preliminary Report on Patentability”, Issued in PCT Application No. PCT/US2007/078578; Mailing Date: Apr. 9, 2009.
“Ex Parte QuayleAction”, U.S. Appl. No. 11/612,370, Mailing Date: May 29, 2008.
Chen et al, “Offset Correction Methods and Arrangement for Positioning and Inspecting”, U.S. Appl. No. 11/612,370, filed Dec. 18, 2006.
Chen et al, “Offset Correction Techniques for Positioning Substrates”, U.S. Appl. No. 11/612,355, filed Dec. 18, 2006.
Chen et al, “Offset Correction Techniques for Positioning Substrates”, U.S. Appl. No. 60/827,671, filed Sep. 29, 2006.
Chen et al, “Offset Correction Techniques for Positioning Substrates”, U.S. Appl. No. 60/827,671, filed Sep. 29, 2006.
“First Office Action”, CN Application No. 200780036424.1; Mailing Date: Jun. 17, 2010.
“First Office Action”, CN Application No. 200780036424.1; Mailing Date: Jun. 17, 2010.
Camargo Fransisco
Fischer Andreas
Shin Neungho
IP Strategy Group, P.C.
Lam Research Corporation
Le Thao P.
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