Arrangement with image sensors

Details Arrangement with image sensors Arrangement with image sensors

2006-04-18

2006-04-18

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000

Reexamination Certificate

active

07030434

ABSTRACT:
A memory transistor and a selection transistor of an image sensor are connected in series and between a bit line (B5) and a reference line (R5). A gate electrode of the selection transistor is connected to a word line (W5), which extends crosswise in relation to the bit line (B5). A diode of the image sensor is switched between a gate electrode (G5) of the memory transistor and a first source/drain area (S/D5) of the memory transistor, which is connected to the selection transistor in such a way is polarized towards the first source/drain area (S/D5) of the memory transistor and in the reverse direction. A photodiode of the image sensor is switched between a voltage connection and either the gate electrode (G5) of the memory transistor or the first source/drain area (S/D5) of the memory transistor in such a way that it is polarized towards the voltage connection and in the reverse direction.

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