ArF photoresist copolymers

Details ArF photoresist copolymers ArF photoresist copolymers

1997-12-30

2000-10-17

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

526269, 526272, 526281, C08F23200

Patent

active

061329266

ABSTRACT:
A photoresist including a copolymer prepared from bicycloalkene derivative, maleic anhydride and/or vinylene carbonate, which has molecular weight ranging from about 3,000 to 100,000. The photoresist can be used for submicrolithography employing deep ultra violety as a light source. In addition to being of high etch resistance and thermal resistance, the photoresist has good adhesiveness and can be developed in a TMAH solution.

REFERENCES:
patent: 3715330 (1973-02-01), Nogami et al.
patent: 4011386 (1977-03-01), Matsumoto et al.
patent: 4106943 (1978-08-01), Ikeda et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4883740 (1989-11-01), Schwalm et al.
patent: 5087677 (1992-02-01), Brekner et al.
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5278214 (1994-01-01), Moriya et al.
patent: 6028153 (2000-02-01), Jung
Jung et al., "Synthesis and Characterization of Alicyclic Polymers with Hydrophilic Groups for 193 nm Single Layer Resist", 1999, CA Abstract 130:229879.
Uzodinma Okoroanyanwu et al., "New Single Layer Positive Photoresists for 193 nm Photolithography," SPIE, vol. 3049, 1997, pp. 92-103.
D. Braun et al., "Uber Die Copolymerization Von Maleinsaure-Anhydrid Mit Bicyclo[2.2.1] Hept-5-En-2-Carbonsaure," Eur. Polym. J., vol. 10, 1974, pp. 357-365.
CA vol. 66 (1967), 76325, pp. 7178-7179.
CA Register No. 100207-98-5.
CA Register No. 32759-57-2.
CA Register No. 27056-70-8.
CA Register No. 174659-58-6.
CA Register No. 28503-41-5.
CA Register No. 194997-59-6.
CA Abstract No. 104:149512 & Macromolecules 19(4) 1266-8 (1986).
CA Abstract No. 91:124064 & Makromol. Chem. 180(8) 1975-88 (1979).
CA Abstract No. 113:24734 & JP 02 051511.
CA Abstract No. 124:317926 & Marcomol. Rapid Commun. 17(3) 173-180 (1996).
CA Abstract No. 124:203171 & Macromolecules 29(8) 2755-63 (1996).
CA Abstract No. 199328-07-9.
R.D. Allen et. al., "The Influence of Photoacid Structure on the Design and Performance of 193nm Resists", 1997, Journal of Photopolymer Science and Technology, vol. 10, 503-510.
F.M. Houlihan et. al., "A Commerically Viable 193nm Single Layer Resist Platform", 1997, Journal of Photopolymer Science and Technology, vol. 10, 511-520.
J.C. Jung et. al., "ArF Single Layer Resist Composed of Alicyclic Main Chain Containing Maleic Anhydride", 1997, Journal of Photopolymer Science and Technology, vol. 10, 529-533.
S.J. Choi et. al., "New ArF Single-layer Resist for 193-nm Lithography", 1997, Journal of Polymer Science and Technology, vol. 10, 521-528.
K. Nozaki and Ei Yaro, "New Protective Groups in Methacrylate Polymer for 193-nm Resists", 1997, Journal of Photopolymer Science and Technology, vol. 10, 545-550.
K. Nakano et. al., "Chemically Amplified Resist Based on High Etch-Resistant Polymer for 193-nm Lithography", 1997, Journal of Photopolymer Science and Technology, vol. 10, 561-569.
T.I. Wallow et al., "Evaluation of Cyclo-Olefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photo-Resists for 193 NM Photo-Lithography" SPIE vol. 2724/354--365.
CA Abstract 127;227308 & Proc. SPIE-Int. Soc. Opt. Eng. (1997) 3049 Advances in Resist Technology and Processing XIV 92-103.
CA Abstract 127;227269 & J. Photopolym. Sci. Technol. (1997) 10(4) 529-534.
CA Abstract 66;18889 & Magy. Kem. Foly. (1966) 72(11)491-3.

Affiliated with

Also associated with

Rating

ArF photoresist copolymers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with ArF photoresist copolymers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ArF photoresist copolymers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-466566