Area-efficient layout for high voltage lateral devices

Details Area-efficient layout for high voltage lateral devices Area-efficient layout for high voltage lateral devices

1994-11-30

1996-07-09

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257409, 257493, H01L 2976

Patent

active

055347215

ABSTRACT:
A lateral semiconductor device is disclosed having a semiconductor body of a first conductivity type, and a drift region having a second conductivity type opposite that of the first conductivity type and formed on a surface of the semiconductor body. A drain region formed in the drift region includes an end portion having a surface area including a predetermined surface radius of curvature and a first surface width; a transitional portion tapers from the first surface width to a second surface width; and a medial portion having the second surface width. A source region is formed in the drift region and spaced from the drain region.

REFERENCES:
patent: 5304827 (1994-04-01), Malhi et al.
J. A. Appels and H. M. J. Vaes, "High-Voltage Thin Layer Devices (RESURF Devices)," Technical Digest, 1979, International Electronic Devices Meeting, pp. 238-241.
K. Board and M. Darwish, "LDMOS Transistors with Implanted and Deposited Surface Layers," IEE Proceedings-I, Aug. 1985, pp. 177-180.
S. Colak, "Effects of Drift Region Parameters on the Static Properties of Power LDMOST," Transactions IEEE Electronic Devices, vol. ED-28, No. 12, Dec. 1981, pp. 1455-1466.
E. J. Wildi, P. V. Gray, T. P. Chow, H. R. Chang, and M. E. Cornell, "Modeling and Process Implementation of Implanted RESURF Type Devices," Technical Digest, 1979, International Electronic Devices Meeting, pp. 238-241.
H. Yilmaz, "Modeling nd Optimization of Lateral High Voltage IC Devices to Minimize 3-D Effects," Electrochemical Society Proceedings on High Voltage and Smart Power Devices, vol. 87-13, 1987, pp. 290-294.

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