Area efficient high voltage MOSFETs with vertical RESURF drift r

Details Area efficient high voltage MOSFETs with vertical RESURF drift r Area efficient high voltage MOSFETs with vertical RESURF drift r

1995-05-31

1996-10-29

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257394, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055699499

ABSTRACT:
A high voltage power transistor cell is developed that provides improved RDSon performance without sacrificing breakdown performance through utilization of trench based transistor technology. A source, drain and trench are formed within a substrate. A gate is formed or the surface over a spacing between the source and the trench. A drift region is formed around the trench. An isolation region may optionally be added allowing electrical isolation between the source and the substrate. The lateral current flow feature allows multiple high voltage power transistors, electrically isolated from one another, to exist on a single semiconductor chip. The drift region formed around the trench provides RESURF transistor characteristics without sacrificing die area.

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