Architectures for CPP ring shaped (RS) devices

Details Architectures for CPP ring shaped (RS) devices Architectures for CPP ring shaped (RS) devices

2006-10-03

2006-10-03

Mai, Son (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07116575

ABSTRACT:
A current-perpendicular-to-plane (CPP) ring-shaped (RS) magnetoresistive random access memory (MRAM) element is provided in several embodiments including operational functionality of static read (SR) and dynamic read (DR). According to an embodiment, a memory element has one or more vias passing through a center hole in the CPP RS MRAM element. Each end of each via is coupled with a separate write line segment that extends radially from the center hole past a perimeter of the ring-shaped element. The write lines and vias are configured to generate magnetic fields for switching a magnetization direction of one or more layers of the ring-shaped bits in the array.

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Zhu, “MRAM: Promises and Challenges,” Electrical and Computer Engineering Nov. 2001.

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