Architecture for ribbon ion beam ion implanter system

Details Architecture for ribbon ion beam ion implanter system Architecture for ribbon ion beam ion implanter system

2008-07-01

2008-07-01

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07394079

ABSTRACT:
An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.

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PCT search report of corresponding PCT/US2007/001665 by European Patent Office.

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