Architecture for mask programmable devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S202000, C257S209000, C257S391000

Reexamination Certificate

active

06943415

ABSTRACT:
The present invention is directed to a semi-programmable ASIC using two metals for the metal layers. The semi-programmable ASIC may have a prefabricated first section and a customized second section. The prefabricated first section and the customized second section may each include one or more metal layers. The one or more metal layers included in the prefabricated first section may be used to define undifferentiated sets of electrical and logic elements. An undifferentiated set of electrical and logic elements may be a NAND logic gate, a NOR logic gate, or the like. The one or more metal layers included in the customized second section may be used to define logic functions of the undifferentiated sets of electrical and logic elements. The metal used in the one or more metal layers included in the prefabricated first section may be of one type such as copper, copper alloy, or the like, and the metal used in the metal layers included in the customized second section may be of another type such as aluminum, aluminum alloy, or the like.

REFERENCES:
patent: 6242767 (2001-06-01), How et al.
patent: 6509209 (2003-01-01), Shroff et al.
Embattled gate array players pull out an ace; EE Times; http://www.eetimes.com/story/OEG20020318S0011; Jan. 30, 2003.
Instant Silicon Solution Platforms (ISSPs); NEC Electronics America, Inc.; http://www.necelam.com/ASIC/issp.cfm; Jan. 30, 2003.
The Easy Way to ASIC; Lightspeed Semiconductor; http://www.lightspeed.com/cat.html?cat_id=9.6; Jan. 30, 2003.
NEC Delivers New ASIC Device Platform for Mid-Volume Applications; NEC Global; http://www.nec.co.jp/press/en/0203/1801.html; Jan. 29, 2003.
The Easy Way to ASIC; Lightspeed Semiconductor; www.lightspeed.com; Jul. 2002.

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