Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-01-28
1996-11-12
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723R, 118723HC, C23C 1600
Patent
active
055735967
ABSTRACT:
A reactive ion etching or magnetically enhanced reactive ion etching system consists of a cathode support structure, a shield structure disposed around the cathode, an insulator disposed between the cathode and the shield structure, and a clamping ring capable of mating with the top edge of the insulator. The insulator has a generally cylindrical shape with a flange that extends outward between the shield structure and the clamping ring. A gap between the clamping ring and the top edge of the insulator is controlled to 20 thousandths of an inch or less to restrict an RF coupling path between the shield and the cathode. In addition, the flange acts to interrupt the plasma conduction path between the shield structure and the cathode. By inhibiting plasma conduction between the shield and the cathode, reactive ion etching systems in accordance with the present invention operate in a higher pressure, higher power regime without arcing or exciting a secondary plasma.
REFERENCES:
patent: 5269896 (1993-12-01), Munemasa
patent: 5334298 (1994-08-01), Gegenwart
patent: 5380558 (1995-01-01), Fujino
patent: 5382339 (1995-01-01), Aranovich
patent: 5405652 (1995-04-01), Kashiwagi
Patent Abstracts of Japan, vol. 10, No. 56 (C-331) [2113], 6 Mar. 1986 & JP-A-60 197873 (Nippon Shinku Gijutsu) 7 Oct. 1985-Abstract.
Patent Abstracts of Japan, vol. 18, No. 68 (C-1161), 4 Feb. 1994 & JP-A-05 279859 (Canon), 26 Oct. 1993-Abstract.
Database WPI-Week 8527-Derwent Publications Ltd., London, GB: AN 85-163189 & JP-A-60 094 724 (Nichiden Anelba), 27 May 1985-Abstract.
Applied Materials Inc.
Breneman R. Bruce
Chang Joni Y.
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