Aqueous developer solution for positive type photoresists with t

Details Aqueous developer solution for positive type photoresists with t Aqueous developer solution for positive type photoresists with t

1984-05-29

1986-09-09

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

430149, 430154, 430309, 430326, 252541, 252547, 252548, G03C 500

Patent

active

046109536

ABSTRACT:
The invention provides an aqueous alkaline developer solution for a positive-type photoresist layer for pattern-wise treatment of the surface of a substrate, e.g., semiconductor wafer. The developer solution contains a tetraalkyl ammonium hydroxide, e.g., tetramethyl ammonium hydroxide, and a trialkyl hydroxyalkyl ammonium hydroxide, e.g., trimethyl hydroxyethyl ammonium hydroxide, as the essential ingredients and the temperature dependency of the development performance thereof is noticeably smaller than that of conventional developer solutions with respect to properties of the sensitivity of the photoresist and the thickness reduction of the photoresist layer in the unexposed areas, by virtue of the compensating temperature dependencies for these properties of these two ingredients for each other.

REFERENCES:
patent: 4141733 (1979-02-01), Guild
patent: 4239661 (1980-12-01), Muraoka et al.
patent: 4294911 (1981-10-01), Guild
patent: 4411981 (1983-10-01), Minezaki
patent: 4423138 (1983-12-01), Guild
Asano et al., Extended Abstracts, The Electrochem. Soc., Inc., Fall Meeting, vol. 76-2, pp. 911-913, Abstract #354, 10/1976.
Grieco et al., IBM Technical Disclosure Bulletin, vol. 13 (7), p. 2009 (1970).

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