Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2005-01-24
2010-02-16
Webb, Gregory E (Department: 1796)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C510S176000, C134S001300, C134S002000
Reexamination Certificate
active
07662762
ABSTRACT:
A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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Bernhard David
Nguyen Long
Seijo Ma. Fatima
Wojtczak William A.
Advanced Technology & Materials Inc.
Fuierer Tristan A.
Lin Chih-Sheng
Moore & Van Allen PLLC
Webb Gregory E
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