Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-22
2005-11-22
Smith, Brad (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S707000, C510S175000, C510S176000
Reexamination Certificate
active
06967169
ABSTRACT:
A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
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Bernhard David
Nguyen Long
Seijo Ma. Fatima
Wojtczak William A.
Advanced Technology & Materials Inc.
Chappuis Margaret
Fuierer Tristan A.
Hultquist Steven J.
Smith Brad
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