Aqueous cleaning composition containing copper-specific...

Details Aqueous cleaning composition containing copper-specific... Aqueous cleaning composition containing copper-specific...

2005-03-08

2005-03-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Cleaning of wafer as interim step

C438S905000

Reexamination Certificate

active

06864193

ABSTRACT:
A composition and method for fabricating a semiconductor wafer containing copper is disclosed, which method includes plasma etching a dielectric layer from the surface of the wafer, plasma ashing a resist from the surface of the wafer, and cleaning the wafer surface by contacting same with a cleaning formulation, which includes the following components and their percentage by weight ranges shown: (a) from about 0.01 to 80% by weight organic solvent, (b) from about 0.01 to 30% by weight copper chelating agent, (c) from about 0.01 to 10% by weight copper inhibitor, and (d) from about 0.01 to 70% by weight water.

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