Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Patent
1996-09-20
1999-03-16
Dutton, Brian
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
H01L 2122, H01L 2138
Patent
active
058829911
ABSTRACT:
A method for forming shallow junctions using rapid thermal gas-phase doping (RTGPD). A wafer (26) is placed in a process chamber (14). After evacuating the chamber, a dopant gas combined with a carrier gas is introduced to the chamber (14) while the pressure is increased from a base pressure to on the order of 200-3000 Torr. The gas flow is shut off when the desired elevated pressure is reached. A rapid thermal cycle is then performed using a static gas flow and elevated pressures to create a shallow junction (40).
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Brady III W. James
Donaldson Richard L.
Dutton Brian
Garner Jacqueline J.
Texas Instruments Incorporated
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