Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-08-16
2000-10-10
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 438629, 438787, 438970, C23C 302, H01L 21283
Patent
active
061301493
ABSTRACT:
A method is disclosed for forming an aluminum bump on an integrated circuit (IC) chip without leaving any metal residue on the passivation layer of the chip. This is accomplished by planarizing the passivation layer with spin-on-glass (SOG) and then forming a PECVD oxide as a sacrificial layer over the SOG, and etching through these layers to form an opening over a metal pad underlying the passivation layer. Then, a layer of aluminum is deposited over the substrate, including the opening, to form an aluminum bump. Aluminum bump is next formed by etching through a patterned oxide which acts as a hard mask over the aluminum layer. The SOG is then removed leaving the passivation layer free of any aluminum residue.
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Chien Wen-Chen
Lo Chi-Hsin
Yu Ding-Jeng
Ackerman Stephen B.
Anya Igwe U.
Saile George O.
Smith Matthew
Taiwan Semiconductor Manufacturing Company
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