Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-16
2008-03-11
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000
Reexamination Certificate
active
07342273
ABSTRACT:
A process for forming active transistors for a semiconductor memory device by the steps of: forming transistor gates having generally vertical sidewalls in a memory array section and in periphery section; implanting a first type of conductive dopants into exposed silicon defined as active area regions of the transistor gates; forming temporary oxide spacers on the generally vertical sidewalls of the transistor gates; after the step of forming temporary spacers, implanting a second type of conductive dopants into the exposed silicon regions to form source/drain regions of the active transistors; after the step of implanting a second type of conductive dopants, growing an epitaxial silicon over exposed silicon regions; removing the temporary oxide spacers; and forming permanent nitride spacers on the generally vertical sidewalls of the transistor gates.
REFERENCES:
patent: 5334861 (1994-08-01), Pfiester et al.
patent: 5949105 (1999-09-01), Moslehi
patent: 6037620 (2000-03-01), Hoenigschmid et al.
patent: 6326664 (2001-12-01), Chau et al.
patent: 7037775 (2006-05-01), Cho et al.
Cho Chih-Chen
Ping Er-Xuan
Micro)n Technology, Inc.
Prenty Mark V.
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