Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2000-07-18
2001-07-17
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S906000
Reexamination Certificate
active
06261955
ABSTRACT:
BACKGROUND OF THE INVENTION
(1) Field of the Invention
The invention relates to a method of copper decontamination and cleaning of surfaces and tools in the fabrication of integrated circuits, and more particularly, to a method of copper decontamination and cleaning of surfaces and tools by dissolving copper in a vapor phase.
(2) Description of the Prior Art
The evolution of copper interconnect processes in the semiconductor manufacturing industry involves integrating copper into the existing fabrication process, which consists mainly of aluminum processes. In such dual-metal Fabs, incidents of copper spills and factory-wide cross-contamination must be contained. At present, Isopropyl Alcohol is commonly used to wipe and clean copper. This method is inadequate as traces of copper are usually left in minute quantities sufficient to cause further contamination It is desired to provide an effective method of cleaning copper spills and completely removing copper contamination from the surface of tools and equipment.
U.S. Pat. No. 5,939,334 to Nguyen et al teaches cleaning of copper oxides on copper lines by using &bgr;-diketone vapor. This method uses a reaction that is almost exclusively to copper oxide and not to copper. U.S. Pat. No. 5,744,192 to Nguyen et al and U.S. Pat. No. 5,767,301 to Senzaki et al teach the use of hfac as a precursor in copper deposition.
SUMMARY OF THE INVENTION
A principal object of the present invention is to provide an effective and very manufacturable method of removing copper contamination of tools and equipment in the fabrication of integrated circuits.
Another object of the present invention is to provide an effective and very manufacturable method of removing copper contamination of tools and equipment in the fabrication of integrated circuits by dissolving copper contamination in a vapor phase.
Yet another object of the present invention is to provide an effective and very manufacturable method of removing copper contamination from any equipment without corroding or destroying equipment parts.
A still further object is to provide a novel copper decontamination process using an organic-based HFACAC compound in vapor phase.
In accordance with the objects of this invention an effective copper decontamination method in the fabrication of integrated circuits is achieved. A decontamination compound in vapor form is sprayed over elemental copper wherein the compound dissolves all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
Also in accordance with the objects of the invention, a novel organic-based HFACAC decontamination compound in vapor phase is provided. The HFACAC decontamination compound in vapor phase is sprayed over elemental copper wherein the compound dissolves all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
REFERENCES:
patent: 5087485 (1992-02-01), Cho
patent: 5431774 (1995-07-01), Douglas
patent: 5744192 (1998-04-01), Nguyen et al.
patent: 5767301 (1998-06-01), Senzaki et al.
patent: 5939334 (1999-08-01), Nguyen et al.
Aliyu Yakub
Chooi Simon
Gupta Subhash
Ho Paul Kwok Keung
Roy Sudipto Ranendra
Chartered Semiconductor Manufacturing Ltd.
Gurley Lynne A.
Niebling John F.
Pike Rosemary L. S.
Saile George O.
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