Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1996-09-24
1998-05-26
Chea, Thorl
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
216 51, 216 67, 216 79, 430322, 430323, 430324, G03F 700
Patent
active
057559791
ABSTRACT:
A pad conditioning method and apparatus for chemical-mechanical polishing. A polishing pad (114) is attached to a platen (112) and used to polish a wafer (116). Rotating arm (118) positions the wafer (116) over the pad (114) and applies pressure. During wafer polishing particles build up on the polishing pad (114) reducing its effectiveness. Either during or in between wafer polishing (or both), conditioning head (122) is applied to pad (114) to remove the particles from pad (114) into the slurry (120). Conditioning head (122) comprises a semiconductor substrate (126) that is patterned and etched to form a plurality of geometries (128) having a feature size on the order of polishing pad (114) cell size.
REFERENCES:
patent: 4351894 (1982-09-01), Yonezawa et al.
Appel Andrew T.
Chisholm Michael Francis
Brady III Wade James
Chea Thorl
Donaldson Richard L.
Garner Jacqueline J.
Texas Instruments Incorporated
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