Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Reexamination Certificate
2006-05-02
2006-05-02
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
C257S189000, C257S190000
Reexamination Certificate
active
07038300
ABSTRACT:
An apparatus includes a crystalline substrate having a top surface, a crystalline semiconductor layer located on the top surface, and a plurality of dielectric regions. The crystalline semiconductor layer includes group III-nitride and has first and second surfaces. The first surface is in contact with the top surface. The second surface is separated from the top surface by semiconductor of the crystalline semiconductor layer. The dielectric regions are located on the second surface. Each dielectric region is distant from the other dielectric regions and covers an end of an associated lattice defect. Each lattice defect threads the crystalline semiconductor layer.
REFERENCES:
patent: 5927995 (1999-07-01), Chen et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6312967 (2001-11-01), Ikeda
patent: 6756246 (2004-06-01), Hiramatsu et al.
patent: 6784463 (2004-08-01), Camras et al.
patent: 2002/0086534 (2002-07-01), Cuomo et al.
E.J. Miller et al., “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope”, Journal of Applied Physics, vol. 91, No. 12, Jun. 15, 2002, pp. 9821-9826.
E.J. Miller et al., “Reverse-bias leakage current reduction in GaN Schottky diodes by surface modification with an atomic force microscope,” Abstract from Technical Program Session V of Electronic Materials Conference,Santa Barbara, CA( Jun. 25-27, 2002) 1 page (Note: may have been published before Jun. 25, 2002).
E.J. Miller et al., “Characterization and Local Passivation of Reverse-Bias Current Leakage Paths in an AIGaN/GaN Heterostructure, Abstract from Nov. 2001 MRS Fall eeting,” Symposium 1, Session I 10.7 (1 page), publ.'d online at www. mrs.org/meetings/fall 2001.
Lee, J.J., et al., “MBE Growth of Wurtzite GaN on LaA1O3(100),” Journal of Crystal Growth, vol. 213, No. 1-2, pp. 33-39, May 2000.
Hsu Julia Wang-Ping
Manfra Michael James
Lucent Technologies - Inc.
McCabe John F.
Nguyen Joseph
Parker Kenneth
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