Apparatus using Manhattan geometry having non-Manhattan...

Details Apparatus using Manhattan geometry having non-Manhattan... Apparatus using Manhattan geometry having non-Manhattan...

2006-01-24

2009-06-02

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257SE21521, C438S014000

Reexamination Certificate

active

07541611

ABSTRACT:
A device is described, including a first diffusion region having a first terminal, a second diffusion region having a second terminal, and a channel region disposed between the first diffusion region and the second diffusion region. Further, the first terminal and the second terminal are offset to enable a non-Manhattan current flow. A system is also described, including the previously described device and a second transistor. The pathway for the flow of the majority of the current carriers in the device defines a first direction. The second transistor also has at least two terminals, and a pathway for a majority of current carriers between the two terminals defines a second direction. The angle between the first direction and the second direction is nonzero and acute.

REFERENCES:
patent: 5682048 (1997-10-01), Shinohara et al.
patent: 6365947 (2002-04-01), Vollrath et al.
patent: 2004/0238897 (2004-12-01), Oishi
D.A. Bittle et al., “Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages”, Journal of Electronic Packaging, Sep. 1991, p. 203, vol. 113, Auburn Alabama, 13 pages.
C. Jaeger et al., “Effects of Stress-Induced Mismatches on CMOS Analog Circuits,” Proceeings of the 1995 International VLSI TSA Symposium, 1995, 354, Taipei, Taiwan, 7 pages.
L. A. Glasser & Daniel W. Dobberpuhl, “The Design and Analysis of VLSI Circuits”, 1985, Addison-Wessley Longman, Boston, Chapters 1-5, 329 pages.

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